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Improper ferroelectricity and multiferroism in 2H-BaMnO3

Improper ferroelectricity and multiferroism in 2H-BaMnO3 - 08/04/2013

Using first-principles calculations, we have investigated theoretically the stable 2H hexagonal structure of BaMnO3. We show that from the stable high-temperature P63/mmc structure, the compound should exhibit an improper ferroelectric structural phase transition to a P63cm ground state. Combined with its antiferromagnetic properties, 2H-BaMnO3 is therefore expected to be multiferroic at low temperature. The phase transition mechanism in BaMnO3 appears similar to what was reported in YMnO3 in spite of totally different atomic arrangement, cation sizes, and Mn valence state.

Improper ferroelectricity and multiferroism in 2H-BaMnO3. Julien Varignon and Philippe Ghosez, Phys. Rev. B 87, 140403(R) (2013).

About the origin of the 2DEG at the LaAlO3/SrTiO3 interface

About the origin of the 2DEG at the LaAlO3/SrTiO3 interface - 02/01/2013

The physical mechanisms responsible for the formation of a two-dimensional electron gas at the interface between insulating SrTiO3 and LaAlO3 have remained a contentious subject since its discovery in 2004. Opinion is divided between an intrinsic mechanism involving the build-up of an internal electric potential due to the polar discontinuity at the interface between SrTiO3 and LaAlO3, and extrinsic mechanisms attributed to structural imperfections. Here we show that interface conductivity is also exhibited when the LaAlO3 layer is diluted with SrTiO3, and that the threshold thickness required to show conductivity scales inversely with the fraction of LaAlO3 in this solid solution, and thereby also with the layer’s formal polarization. These results can be best described in terms of the intrinsic polar-catastrophe model, hence providing the most compelling evidence, to date, in favour of this mechanism. 

Tunable conductivity threshold at polar oxide interfacesM.L. Reinle-Schmitt, C. Cancellieri, D. Li, D. Fontaine, M. Medarde, E. Pomjakushina, C.W. Schneider, S. Gariglio, Ph. Ghosez, J.-M. Triscone and P.R. Willmott, Nature Communications  3, 932 (2012) 

See also the following link: Press Release

Artificial oxide nanostructures: engineering on the atomic scale

Artificial oxide nanostructures: engineering on the atomic scale - 01/01/2013

The relentless march of progress in modern electronic devices has always been dependent on continuous improvements in our understanding of the materials that go in to them. In a joint work between the Universities of Liège and Geneva, a new artificial material is revealed that marks the beginning of a revolution in the development of materials for electronic applications. The new material, a superlattice, which has a multilayer structure composed of alternating atomically thin layers of two different oxides (PbTiO3 and SrTiO3), possesses properties radically different to either of the two materials by themselves. These new properties are a direct consequence of the artificially layered structure and are driven by interactions at the atomic scale at the interfaces between the layers. Besides the immediate applications that could be generated by this nanomaterial, this discovery opens a completely new field of investigation and the possibility of new functional materials based on a new concept: interface engineering on the atomic scale.
Improper ferroelectricity in perovskite oxide artificial superlattices. Eric Bousquet (ULg), Matthew Dawber (SBU/UniGe), Nicolas Stucki (UniGe), Céline Lichtensteiger (UniGe), Patrick Hermet (ULg), Stefano Gariglio (UniGe), Jean-Marc Triscone (UniGe) & Philippe Ghosez (ULg). Nature 452, pp. 732-736 (2008)
See also the following link: A New Nanomaterial